Reactive array

ABSTRACT

Methods and apparatus for providing a radiator having an antenna comprising a patch antenna layer and a first ground plane layer, wherein the antenna has a reactive field region of the radiator between the patch antenna layer and the first ground plane layer, and an integrated circuit located in the active region.

BACKGROUND

As is known in the art, a plurality of antenna elements can be disposedto form an array antenna. It is often desirable to utilize antennaelements capable of receiving radio frequency (RF) signals. Patchradiators may be used and are low cost and easy to integrate. Inaddition, patch radiators may be useful when thin, low weight radiatorsare desirable. Conventional radiators receive signals from front-endcircuitry on circuit board layers connected to the radiators by viaconnections, for example. As capability and components increase thecircuit board layers become crowded and component density reaches alimit. Placing components in the patch area can reduce density on thecircuit board allowing for more capability. Such via connections are notlossless and may not provide suitable propagation characteristicswithout proper design. In addition, via connections between board layersmay present challenging fabrication issues.

As is known in the art, microwave circuits may suffer from performanceissues due to higher order coupling modes. In a stripline architecturethese are dealt with using plated vias that connect ground plane toground plane. In a microstrip assembly with a conductive lid it is notpossible to use plated through hole vias. Prior attempts to deal withthe high-order mode coupling include inserting thin absorber layers intothe microwave PCB assembly, introducing absorber blocks, increasing theseparation between microwave and MMICs, and reducing amplifier gain.These methods can provide some performance improvements, but havedisadvantages in that they are trial-and-error methods that are notdeterministic. As a result, complex microwave circuits often encountercoupling problems that delay design and manufacturing cycles. Absorberblocks may introduce loss in critical circuits, have considerableunit-to-unit variability, and may not be completely effective.Increasing separation between critical MMICs is generally not practicalfor high frequency or advanced circuits because of limited real estate,creates new overcrowding PCB layout conditions, and is not alwayseffective. Reducing the amplifier gain degrades overall systemperformance, increases the risk of manufacturing defects, and limitsperformance improvements.

SUMMARY

Embodiments of the invention provide methods and apparatus for areactive field array having front-end microwave components within aradiator, such as a patch radiator. The connection from the radiatingelement and circuitry is essentially lossless. In embodiments, circuitryis provided in MMICs, which may be bare die configurations eliminatingpackage cost and loss. In embodiments, the electrical path length fromthe radiator port to the first receive amplifier is essentially zerothereby achieving minimal front-end loss. Housing front-end MMICs withinthe radiator's reactive fields reduces size and weight reduce tounprecedented levels.

In some embodiments, known mode suppression techniques can be used. Insome embodiments, radiators include high-order mode suppression byincluding shorting posts in a cavity beneath the patch conductor havingMMICs or other circuits.

In embodiments, a cavity containing a PCB includes a series of shortingposts located to achieve high order mode suppression in the cavity. Thecavity can include a first ground plane that can be considered a bottomground plane and a second ground plane that can be considered a topground plane. The cavity can be defined by conductive walls at edges ofthe cavity. One or more ICs can be mounted on a surface of the PCB. Theshorting posts can extend from the second ground plane into the cavityfor suppressing higher order modes.

In one aspect, a radiator comprises: an antenna comprising a patchantenna layer and a first ground plane layer, wherein the antenna has areactive field region of the radiator between the patch antenna layerand the first ground plane layer; and an integrated circuit located inthe active region.

A radiator can include one or more of the following features: theintegrated circuit comprises a monolithic microwave integrated circuit(MMIC), the MMIC is bare die, the MMIC does not have any wirebondconnections, the integrated circuit comprises a (MMIC), wherein the MMICcan comprise a power amplifier, RF switch, low noise amplifier, phaseshifter, and/or digital attenuator, a logic layer, wherein the logiclayer is connected to the MMIC, the logic layer is connected to the MMICwith a via, a second ground layer, wherein the second ground layer isconnected to the patch antenna layer, the second ground layer isconnected to the patch antenna layer by a via, the radiator has athickness of less than or equal to about 2.2 mm, the radiator comprisesthe antenna, a paint layer on the patch antenna, the integrated circuitincluding at least one MMIC, a bond film, a laminate layer, a secondground plane layer, a logic layer, and a structural carrier layer,and/or the radiator has a density of less than about 2.0 Kg/m².

In another aspect, a method comprises: employing an antenna comprising apatch antenna layer and a first ground plane layer, wherein the antennahas a reactive field region of the radiator between the patch antennalayer and the first ground plane layer, wherein the antenna forms partof a radiator; and employing an integrated circuit located in the activeregion.

A method can include one or more of the following features: theintegrated circuit comprises a monolithic microwave integrated circuit(MMIC), the MMIC is bare die, the MMIC does not have any wirebondconnections, the integrated circuit comprises a (MMIC), wherein the MMICcan comprise a power amplifier, RF switch, low noise amplifier, phaseshifter, and/or digital attenuator, a logic layer, wherein the logiclayer is connected to the MMIC, the logic layer is connected to the MMICwith a via, a second ground layer, wherein the second ground layer isconnected to the patch antenna layer, the second ground layer isconnected to the patch antenna layer by a via, the radiator has athickness of less than or equal to about 2.2 mm, the radiator comprisesthe antenna, a paint layer on the patch antenna, the integrated circuitincluding at least one MMIC, a bond film, a laminate layer, a secondground plane layer, a logic layer, and a structural carrier layer,and/or the radiator has a density of less than about 2.0 Kg/m².

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing features of this invention, as well as the inventionitself, may be more fully understood from the following description ofthe drawings in which:

FIGS. 1 and 1A show an example radiator having MMICs located in a cavitybelow the antenna element;

FIG. 1B shows a logic layer of the radiator of FIG. 1 with exampledimensions;

FIG. 1C shows the radiator of FIG. 1 with example dimensions;

FIG. 2 is a schematic representation of an example circuit that can forma part of the radiator of FIG. 1;

FIG. 3 shows example tiles of radiator elements that can form a phasedarray antenna;

FIG. 4 shows a cavity having a PCB and shorting posts for high ordermode suppression;

FIG. 5 is a top view of a PCB in a cavity with a 2×2 unit cell havingshorting posts;

FIG. 6A is a graphical representation of E-field intensity in a cavitywithout mode suppression;

FIG. 6B is a graphical representation of E-field intensity in a cavitywith example mode suppression;

FIG. 7 is a schematic representation of a cavity having an exampleshorting post distribution with gaps;

FIG. 8 shows a top view of a notional PCB having ICs and shorting posts;

FIGS. 9A and 9B are schematic representations of equipment to formshorting posts; and

FIG. 10 is a flow diagram showing an example sequence of steps toprovide shorting posts for high order mode suppression.

DETAILED DESCRIPTION

FIGS. 1 and 1A show an example radiator 100 having circuitry within thereactive field region of the radiator. Integrated circuits 102 caninclude one or more MMICs (Monolithic microwave integrated circuits) ina cavity 104 under a patch antenna layer 106. The patch antenna layer106 may be covered by a material 108, such as paint having desiredcharacteristics. As is known in the art, MMICs refer to integratedcircuits (ICs) that operate at microwave frequencies, e.g., (300 MHz to300 GHz). Example MMICs include signal mixers, power amplifiers, lownoise amplifiers (LNAs), and high-frequency switches. Inputs and outputson MMIC devices are typically matched to a 50 Ohm impedance.

In the illustrated embodiment, a ground layer 110, which can be providedin stripline, is under the MMICs 102 and separated by a layer 112 ofdielectric material. A radiator substrate layer 114, which can beprovided as dielectric material, is located between ground layer 110 anda further ground layer 116, which can comprise copper, for example. Alogic layer 118 under the ground layer 116 can include digital circuitryand DC power distribution. The logic layer 118 can be located on top ofa carrier layer 120.

In embodiments, the patch layer 106 and ground layer 110 provide thepatch antenna. The fringing fields from the antenna are responsible forthe radiation. The fringing E-fields on the edge of the antenna add upin phase and produce the radiation of the antenna. The current adds upin phase on the patch antenna and an equal current in opposite directionis on the ground plane, which cancels the radiation. The antennaradiation arises from the fringing fields, which are due to theadvantageous voltage distribution. That is, the radiation arises due tothe voltage and not the current. The patch antenna can be considered avoltage radiator. In embodiments, MMICs 102 are located in the activeregion between the patch 106 and ground layer 110.

A first via 122 provides a connection from ground layer 116 to the patchradiator 106 and a second via 124 provides a connection from the logiclayer 118 to the MMICs 102. In example embodiments, multiple vias areconnected to the MMICs 102.

In embodiments, a component module 126 can include various circuitcomponents, such as passive components like resistors, inductors and/orcapacitors (RLCs), and can be provided proximate the logic layer 118. Itis understood that a variety of circuit components known to one skilledin the art can form a part of the component module 126.

In embodiments, the MMICs 102 comprise bare die components, e.g., theMMICs do not include packages (encapsulant), which significantly reducesthe area and height needed for the MMICs. The MMICs 102 may have printedbase connections instead of wirebonds.

FIG. 1B shows example layers and layer thicknesses for the logic layer118 of FIG. 1 and FIG. 1C shows example layer thicknesses for theexample radiator 100 of FIG. 1. As can be seen, in the illustratedembodiment the total thickness of the example radiator 100 is less thanabout 0.086 inch (2.2 mm). This thickness is less than any knownradiator. In embodiments, an array having radiator embodiments describedabove can have a weight of less than 2.0 Kg/m²′. It is readilyunderstood that such a low weight is highly desirable, for example inweight critical applications including spaced-based and airborne radars.No conventional arrays are known having such a low weight density.

It is understood that TLY-5 in the illustrated embodiment refers toTLY-5 from TACONIC as one example laminate layer material having adielectric constant in the order of about 2.2 that can be used. Suitablelaminates can comprise glass-filled, PTFE composites with wovenfiberglass reinforcement. Materials should be low density for low weightrequirements.

FIG. 2 shows an example circuit 200 that can form a part of the radiator100 of FIG. 1. A first area 202 provides a via interface into a cavityfor the MMICs, such as the MMICs 102 in the cavity 104 of the patchradiator 100 shown in FIG. 1. In the illustrated embodiment, a 4 portassembly 202 brings 4 transmission lines into the patch area from themicrowave PWB. These represent transmit and receive for twopolarizations. The RX ports pass through a two port LNA 210 and then toRF Switches 208,209 before connecting to the radiator feed. The TX portsconnect directly to the RF switches. In example embodiments, the viainterface includes four vias. First and second connections 204,206provide an interface to a patch antenna, such as patch antenna 102 ofFIG. 1, which can include V and H polarizations. RF switches 208, 209are controlled to select between transmit and receive operation for theradiator. A LNA 210 can be selectively coupled to the patch antenna viathe switches 208,209 in receive mode. In transmit mode a signal from apower amplifier (not shown) is fed to the patch antenna via the switches208,209 for transmission into air. The radiator may include modesuppression in the cavity. Example mode suppression configurations caninclude shorting posts in the cavity, a thin absorber layer above theMMIC circuits, absorber blocks on the PCB, increase MMIC separation,limit amplifier gain, and the like.

FIG. 3 shows an illustrative array 300 having example radiatorembodiments described above within a tile or sub-array 302 of radiatorsshown detached from the array. It is understood that embodiments of theradiators can be used in wide variety of antenna arrays.

Example embodiments of a reactive field array can include radiators withintegrated bare-die MMICs. In embodiments, circuitry in the MMICs may berelatively simple in order to limit the real estate needed with a patchradiator, for example. Some radiator embodiments are surface mounttechnology (SMT) compatible and can be integrated into know PCB layoutprocesses.

It will be appreciated that radiator embodiments described above achievesignificant weight reduction for phased arrays as compared withconventional radiators, such as in X to Ku Band phased arrays. Suchweight reduction enables wearable sensors and communications, desirableaircraft sensors, and new classes of space-based arrays, radars,CubeSATs, and nanoSATs.

It is understood that with regard to embodiments of a radiator referenceis sometimes made herein to an array antenna having a particular arrayshape and/or size (e.g., a particular number of antenna elements) or toan array antenna comprised of a particular number of antenna elements.One of ordinary skill in the art will appreciate, however, that theconcepts, circuits and techniques described herein are applicable tovarious sizes, shapes and types of array antennas.

Thus, although the description provided herein describes the concepts,systems and circuits sought to be protected in the context of a arrayantenna having a substantially square or rectangular shape and comprisedof a elements, each having a substantially square or rectangular-shape,those of ordinary skill in the art will appreciate that the conceptsequally apply to other sizes and shapes of array antennas and antennaelements having a variety of different sizes, shapes.

Reference is also sometimes made herein to an array antenna including anantenna element of a particular type, size and/or shape configured foroperation at certain frequencies. Those of ordinary skill in the artwill recognize, of course, that other antenna shapes may also be usedand that the size of one or more antenna elements may be selected foroperation at any frequency in the RF frequency range.

It should also be appreciated that the antenna elements can be providedhaving any one of a plurality of different antenna element latticearrangements including periodic lattice arrangements (or configurations)such as rectangular, circular square, triangular (e.g. equilateral orisosceles triangular), and spiral configurations as well as non-periodicor other geometric arrangements including arbitrarily shaped latticearrangements.

FIG. 4 shows an example cavity 400 having a shorting post 402 located toachieve high order mode suppression in the cavity. In the illustratedembodiment, the cavity 400 includes a first ground plane 404 that can beconsidered a bottom ground plane and a second ground plane 406 that canbe considered a top ground plane. The cavity 400 is defined byconductive walls 408 at edges of the cavity. An IC 410 is mounted on asurface of a PCB 412 which includes a dielectric layer 414. In theillustrated embodiment, a microstrip feed line 416 is connected to theIC 410. The shorting post 402 extends from the first ground plane 404 bya plated through hole or via 418 into the cavity 400.

FIG. 5 shows an example microwave printed circuit board (PCB) 500 withan example 2x2 unit cell so there are four unit cells 502 a-d asindicated by the dashed lines. As shown in FIG. 4, the PCB can belocated in a cavity surrounded by conductive walls. The PCB includes anumber of ICs and components, such as capacitors, resistors, and thelike. A first IC 504 is located at the intersection of the unit cells502. The ICs can include any practical device suited to meet the needsof a particular application. In one particular embodiment, the first IC504 comprises a beamformer device, such as a 4-1 beamformer, coupled toswitches and power and/or low noise amplifiers, for example. A series ofplated through holes 506 are shown at various locations. As describedmore fully herein, shorting posts (not shown) can be located at variouslocations to reduce higher order mode coupling.

FIG. 6A shows a simulated E-field 600 for a PCB in a cavity without modesuppression. As can be seen, there are a number of regions 602 in whichthere is higher order mode coupling. FIG. 6B shows a simulated E-fieldfor a PCB in a cavity, such as the PCB shown in FIG. 5, with high ordermode suppression provided by a series of shorting posts. In theillustrated embodiment, a 30 dB improvement is shown for adjacent unitcell isolation. In the illustrated example mode suppression, there areeight receivers 604 that surround a field generating IC or other source.There are shorting posts 606 located at edges of the unit cells toachieve desired high order mode suppression.

In embodiments, cutoff boundaries are used to place the shorting postsfor suppressing high order mode coupling. Such coupling modes areresponsible for unexpected electrical problems including impedancemismatch, dispersion, amplifier oscillations, and poor isolation. Theseproblems occur because the cavity mode is often not considered and isdifficult to accurately model. As a result, these modes intrude onotherwise expensive and carefully designed circuits, often producingunacceptable electrical performance.

Prior attempts to deal with the high-order mode coupling includeinserting thin absorber layers into the microwave PCB assembly,introducing absorber blocks, increasing the separation between microwaveand MMICs, and reducing amplifier gain. These methods can provide someperformance improvements, but have disadvantages in that they aretrial-and-error methods that are not deterministic. As a result, complexmicrowave circuits often encounter coupling problems that delay designand manufacturing cycles. Absorber blocks may introduce loss in criticalcircuits, have considerable unit-to-unit variability, and may not becompletely effective.

Increasing separation between critical MMICs is generally not practicalfor high frequency or advanced circuits because of limited real estate,creates new overcrowding PCB layout conditions, and is not alwayseffective. Reducing the amplifier gain degrades overall systemperformance, increases the risk of manufacturing defects, and limitsperformance improvements.

Example embodiments of high order mode suppression reduce coupling withminimal effect on the intended TEM propagation. In embodiments, shortingposts are formed using surface mount technology (SMT) techniques thatcan readily integrate into PCB layout processes.

In embodiments, the PCB design is analyzed using a FEM (finite elementmethod) full wave solver to identify higher order cavity modes. Theoverall size of the cavity determines the mode composition that formslow loss coupling mechanisms. Conductive shorting posts cut off thecavity mode coupling with little effect on the intended microstrip TEMfields.

By using shorting or grounding posts to create an edge wall around theunit cell, a smaller effect unit cell is generated thereby increasingthe minimum resonant frequency of the cavity. In general, the ‘wall’created by shorting posts does not need to be continuous. Inembodiments, a wall can have a gap, as described more fully below. Thesize of this gap determines the allowed inter-unit-cell coupling. Theshorting posts can be placed within the unit cell to suppresshigher-order resonant modes, as well as to address direct,point-to-point coupling due to reactive fields.

FIG. 7 shows an example until cell 700 having a series of shorting posts702 around a perimeter of the until cell. In the illustrated embodiment,the cavity 704 includes a center shorting post 706. Each side of thecavity 704 can include a gap 708 in which shorting posts 702 are notplaced. The gaps 708 should be dimensioned to achieve a desired level ofmode suppression. The cavity 704 can include a connector 710, such as aport for a coaxial connection.

FIG. 8 shows an example layout for a PCB 800 having a series of shortingposts 802 for high order mode suppression. In the illustratedembodiment, a 2×2 unit cell U1, U2, U3, U4 structure is defined. Anumber of MMICs 804, which may comprise SMT ICs, are placed on the PCB800. Output ports 806 can provide external connections for the PCB 800.Traces 808 interconnect the MMICs.

In the illustrated embodiment, the shorting posts 802 are located toform a ‘soft’ circle for creating a smaller effective cavity to preventleakage between sets of unit cells. In embodiments, the shorting posts802 provide a generally circular formation around the ICs 804. Inembodiments, the spacing between shorting posts 802, which is shown asdimension A, is approximately λ/5. In embodiments, a mode suppressionpin spacing of lambda/5 achieves a 30 dB isolation between unit cells. Alambda/5 or less spacing rule may be applied to a real circuit where thepins must be placed around components and microstrip traces.

The shorting posts 802 within the unit cell reduce coupling within the2×2 unit cell structure by creating boundary conditions that do notsupport a low-order/in-band modal field structure and prevent directreactive field coupling by blocking line-of-sight between points of highcoupling, e.g., chip interfaces, transitions to output, etc. Theshorting posts 802 can be formed using any suitable technology.

In one embodiment shown in FIGS. 9A and 9B shorting posts are formedusing wirebonding systems to form stud bumps. A wire 900 is fed througha needle-like tool 902 which may be referred to as a capillary. Ahigh-voltage electric charge is applied to the wire 900 to melt the wireat the tip of the capillary 902. The tip of the wire 900 forms into aball 904 because of the surface tension of the molten metal. The ball904 quickly solidifies and the capillary 902 is lowered to the surfaceof the chip, which is typically heated to at least 125° C. The machinethen pushes down on the capillary 902 and applies ultrasonic energy withan attached transducer. The combined heat, pressure, and ultrasonicenergy create a weld between the metal ball and the surface of the chip.A series of balls, which may be referred to as stud bumps, may bestacked on top of each other. The stud bumps can be formed having anypractical dimensions to meet the requirements of a particularapplication. In embodiments, stud bumps can have a diameter in the orderof 5 mils.

FIG. 10 shows an example sequence of steps for providing higher ordermode suppression in a cavity in accordance with example embodiments ofthe invention. In step 1000, the dimensions of a cavity containing a PCBare received. Example dimensions include length, width, and height ofthe cavity. In embodiments, the cavity is defined by conductive walls.In step 1002, layout of the PCB is received. For example, the layout caninclude the location of ICs, components, and the like, on the PCB. Instep 1004, locations of shorting posts are determined. In step 1006, theshorting posts are formed at the determined locations to provide thedesired higher order mode suppression.

While relative terms, such as “vertical,” “above,” “below,” “lower,”“upper,” “left,” “right,” and the like, may be used to facilitate anunderstanding of example embodiments, such terms are not to limit thescope of the claimed invention in any way. These terms, and any similarrelative terms, are not to construed as limiting in any way, but rather,as terms of convenience in describing embodiments of the invention.

Applications of at least some embodiments of the concepts, systems,circuits and techniques described herein include, but are not limitedto, military and non-military (i.e. commercial) applications including,but not limited to radar, electronic warfare (EW) and communicationsystems for a wide variety of applications including ship-based,airborne (e.g. plane, missile or unmanned aerial vehicle (UAV)), andspace and satellite applications. It should thus be appreciated that thecircuits described herein can be used as part of a radar system or acommunications system.

Having described exemplary embodiments of the invention, it will nowbecome apparent to one of ordinary skill in the art that otherembodiments incorporating their concepts may also be used. Theembodiments contained herein should not be limited to disclosedembodiments but rather should be limited only by the spirit and scope ofthe appended claims. All publications and references cited herein areexpressly incorporated herein by reference in their entirety.

Elements of different embodiments described herein may be combined toform other embodiments not specifically set forth above. Variouselements, which are described in the context of a single embodiment, mayalso be provided separately or in any suitable subcombination. Otherembodiments not specifically described herein are also within the scopeof the following claims.

What is claimed is:
 1. A radiator, comprising: an antenna comprising apatch antenna layer and a first ground plane layer, wherein the antennahas a reactive field region of the radiator between the patch antennalayer and the first ground plane layer; and an integrated circuitlocated in the active region.
 2. The radiator according to claim 1,wherein the integrated circuit comprises a monolithic microwaveintegrated circuit (MMIC).
 3. The radiator according to claim 1, whereinthe MMIC is bare die.
 4. The radiator according to claim 1, wherein theMMIC does not have any wirebond connections.
 5. The radiator accordingto claim 1, wherein the integrated circuit comprises a (MMIC), whereinthe MMIC can comprise a power amplifier, RF switch, low noise amplifier,phase shifter, and/or digital attenuator.
 6. The radiator according toclaim 2, further including a logic layer, wherein the logic layer isconnected to the MMIC.
 7. The radiator according to claim 6, wherein thelogic layer is connected to the MMIC with a via.
 8. The radiatoraccording to claim 1, further including a second ground layer, whereinthe second ground layer is connected to the patch antenna layer.
 9. Theradiator according to claim 1, wherein the second ground layer isconnected to the patch antenna layer by a via.
 10. The radiatoraccording to claim 1, wherein the radiator has a thickness of less thanor equal to about 2.2 mm.
 11. The radiator according to claim 10,wherein the radiator comprises the antenna, a paint layer on the patchantenna, the integrated circuit including at least one MMIC, a bondfilm, a laminate layer, a second ground plane layer, a logic layer, anda structural carrier layer.
 12. The radiator according to claim 11,wherein the radiator has a density of less than about 2.0 Kg/m².
 13. Amethod, comprising: employing an antenna comprising a patch antennalayer and a first ground plane layer, wherein the antenna has a reactivefield region of the radiator between the patch antenna layer and thefirst ground plane layer, wherein the antenna forms part of a radiator;and employing an integrated circuit located in the active region. 14.The method according to claim 13, wherein the integrated circuitcomprises a monolithic microwave integrated circuit (MMIC).
 15. Themethod according to claim 13, wherein the MMIC is bare die.
 16. Themethod according to claim 13, wherein the MMIC does not have anywirebond connections.
 17. The method according to claim 13, wherein theintegrated circuit comprises a (MMIC), wherein the MMIC can comprise apower amplifier, RF switch, low noise amplifier, phase shifter, and/ordigital attenuator.
 18. The method according to claim 13, furtherincluding employing a second ground layer, wherein the second groundlayer is connected to the patch antenna layer.
 19. The method accordingto claim 18, wherein the second ground layer is connected to the patchantenna layer by a via.
 20. The method according to claim 13, whereinthe radiator has a thickness of less than or equal to about 2.2 mm.